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64 Mbit SPI Serial Dual I/O Flash
A Microchip Technology Company
SST25VF064C
Data Sheet
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Write-Status-Register instruction must be
executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-
step instruction sequence of the EWSR instruction followed by the WRSR instruction works like soft-
ware data protection (SDP) command structure which prevents any accidental alteration of the status
register values. CE# must be driven low before the EWSR instruction is entered and must be driven
high before the EWSR instruction is executed.
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to the BP3, BP2, BP1, BP0, and BPL bits of
the status register. CE# must be driven low before the command sequence of the WRSR instruction is
entered and driven high before the WRSR instruction is executed. See Figure 19 for EWSR or WREN
and WRSR instruction sequences.
Executing the Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to
‘1’. When the WP# is low, the BPL bit can only be set from ‘0’ to ‘1’ to lock-down the status register, but
cannot be reset from ‘1’ to ‘0’. When WP# is high, the lock-down function of the BPL bit is disabled and
the BPL, BP0, BP1, BP2, and BP3 bits in the status register can all be changed. As long as BPL bit is
set to ‘0’ or WP# pin is driven high (V IH ) prior to the low-to-high transition of the CE# pin at the end of
the WRSR instruction, the bits in the status register can all be altered by the WRSR instruction. In this
case, a single WRSR instruction can set the BPL bit to ‘1’ to lock down the status register as well as
altering the BP0, BP1, BP2, and BP3 bits at the same time. See Table 3 for a summary description of
WP# and BPL functions.
CE#
SCK
MODE 3
MODE 0
0 1 2 3 4 5 6 7
MODE 3
MODE 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
STATUS
REGISTER IN
SI
SO
MSB
50 or 06
01
MSB
HIGH IMPEDANCE
7 6 5 4 3 2 1 0
MSB
1392 F20.0
Figure 19: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Sta-
tus-Register (WRSR) Sequence
?2011 Silicon Storage Technology, Inc.
23
DS25036A
06/11
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相关代理商/技术参数
SST25VF064C-80-4I-Q2CE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:64 Mbit SPI Serial Dual I/O Flash
SST25VF064C804IS3AE 制造商:Microchip Technology Inc 功能描述:
SST25VF064C-80-4I-S3AE 功能描述:闪存 64M (8Mx8) 80MHz Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF064C-80-4I-S3AE_ 制造商:Microchip Technology Inc 功能描述:
SST25VF064C-80-4I-S3AE-T 功能描述:闪存 2.7V to 3.6V 64Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF064C-80-4I-S3CE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:64 Mbit SPI Serial Dual I/O Flash
SST25VF064C-80-4I-SAE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:64 Mbit SPI Serial Dual I/O Flash
SST25VF064C804ISCE 制造商:Microchip Technology Inc 功能描述: